Advances in electrical properties of plasma-grown oxides of silicon

2 July 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (14) , 732-733
https://doi.org/10.1049/el:19870519

Abstract

Oxides have been grown on silicon using an oxygen/chlorine plasma at temperatures of 400°C and below. The electrical breakdown strength of the oxides together with the interface and bulk oxide properties after low-temperature annealing are considered. The electrical properties are shown to be more than adequate for device applications.

Keywords

PLASMA-GROWN OXIDES
INTERFACE PROPERTIES
SI-SIO2
INTERFACE STATES
LOW-TEMPERATURE ANNEALING
ELECTRICAL BREAKDOWN STRENGTH
ELECTRICAL PROPERTIES
OXIDATION
MOS CAPACITORS
O2-CL2 PLASMA
SEMICONDUCTOR INSULATOR BOUNDARY

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