Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

28 April 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (9) , 537-539
https://doi.org/10.1049/el:19880364

Abstract

The letter reports short wavelength emission (7205 Å) from MBE AlGaAs GRINSCH single Quantum well lasers. Visible emission is obtained with a 60 Å AlGaAs well containing ⋍ 18% aluminium and both design optimisation and growth conditions lead to low-threshold operation. Broad area Fabry-Perot diodes have threshold current densities as low as 390 A/cm² and 670 A/cm² for cavity lengths of 500 µm and 250 µm, respectively.

Keywords

FABRY-PEROT DIODES
LOW THRESHOLD CURRENT DENSITY
GROWTH CONDITIONS
ALGAAS
7205 Å
SEMICONDUCTOR LASER
MOLECULAR BEAM EPITAXY
GRINSCH SINGLE QUANTUM WELL LASERS
CAVITY LENGTHS
SHORT WAVELENGTH EMISSION
VISIBLE LASERS
250 MICRON
500 MICRON
DESIGN OPTIMISATION

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