Substrate-Induced Stabilization of GaInPAs Epitaxial Layers on GaAs and InP
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L21
- https://doi.org/10.1143/jjap.23.l21
Abstract
The unstable regions of mixing have been calculated directly for III-V quaternary GaInPAs alloy layers epitaxially grown on GaAs and InP substrates. The lattice mismatch strain energy due to the existence of the substrate has been included in the free energy of the epitaxial material. The result shows that the quaternary GaInPAs epitaxial layers, once grown on GaAs and InP, are stabilized by the existence of the substrates even at low temperatures and the decomposition into two phases may not occur.Keywords
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