Epitaxial Growth of Ba1-XKXBiO3Thin Films by High-Pressure Reactive RF-Magnetron Sputtering
- 1 August 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (8B) , L1480
- https://doi.org/10.1143/jjap.30.l1480
Abstract
Epitaxial growth of Ba1-XKXBiO3(110) thin films has been carried out on SrTiO3(110) substrates using reactive rf-magnetron sputtering for the first time under a 80 Pa discharge gas which is of a rather higher pressure than is usual. Electrical measurements showed thatTcof as-grown films was 16 K. A preferred orientation of (110) and epitaxial growth of the Ba-K-Bi-O film on the substrates were confirmed by XRD (X-ray diffraction) and RHEED (reflection high-energy electron diffraction), respectively.Keywords
This publication has 6 references indexed in Scilit:
- AC Measurements on Silver Photodoping into Ge30S70 GlassJapanese Journal of Applied Physics, 1990
- Epitaxial Y-Ba-Cu-O thin films on MgO deposited by high-pressure reactive magnetron sputteringJournal of Applied Physics, 1989
- Tunneling spectroscopy in Bi2Sr2CaCu2O8: Is the energy gap anisotropic?Solid State Communications, 1989
- Superconductivity near 30 K without copper: the Ba0.6K0.4BiO3 perovskiteNature, 1988
- Superconductivity above 20 K in the Ba-K-Bi-O systemPhysical Review B, 1988
- Electron tunnelling spectroscopy of YBa2Cu3O7-xceramicsJournal of Physics C: Solid State Physics, 1987