Epitaxial Ga2Se3 layers grown on GaAs(100) using a heterovalent exchange reaction
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 2077-2081
- https://doi.org/10.1116/1.586321
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: