High density, high power arrays of vertical cavity surface emitting lasers operating at 850 nm
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 443-444
- https://doi.org/10.1109/leos.1995.484792
Abstract
We report on the performance of 4 element 850 nm top surface emitting linear VCSEL arrays with spacing of 30 /spl mu/m. These devices have been fabricated by a fully planar process combining an implanted aperture structure with a field isolation implant to achieve electrical isolation between emitters. Implant apertures are 15 /spl mu/m in diameter, with 11 /spl mu/m metal openings. The epitaxial layer structure within which this structure was grown is similar to that reported recently to have achieved outstanding efficiencies in implanted device structures at 850 nm.Keywords
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