Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection

1 March 1998

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 37 (3S)
https://doi.org/10.1143/jjap.37.1424

Abstract

We have studied the ultrafast response of uni-traveling-carrier photodiodes with photo-absorption layer doping levels from 2.5 ×10¹⁷ to 2.5 ×10¹⁸ cm^-3. It is found that 3-dB band width increases with the output voltage in the low output region. This enhancement is more prominent for a lower doping level in the photo-absorption layer. From the analysis of the carrier transport in the photo-absorption layer, we attribute the observed enhanced bandwidth as a result of the self-induced electric field associated with carrier injection.

Keywords

ELECTRIC FIELD
HETEROSTRUCTURE
PHOTODIODE

This publication has 1 reference indexed in Scilit:

Electro-optic characterisation of ultrafast photodetectorsusing adiabatically compressed soliton pulses
Electronics Letters, 1994