Computational studies of heterogeneous reactions of SiH2 on reconstructed Si(111)–(7×7) and Si(111)–(1×1) surfaces

Publisher Website
Google Scholar
Abstract
The dynamics of chemisorption and decomposition of SiH2 on Si(111)–(1×1) and recontructed Si(111)–(7×7) surfaces have been investigated using classical trajectories on a previously described [Surf. Sci. 195, 283 (1988)] potential-energy surface modified to yield the experimental bending frequencies for chemisorbed hydrogen atoms and to incorporate the results of ab initio calculations of the repulsive interaction between SiH2 and closed-shell lattice atoms. The Binnig et al. model is employed for the (7×7) reconstruction. Sticking probabilities are found to be unity on the (1×1) surface and near unity on Si(111)–(7×7). The major mode of surface decomposition on the (7×7) surface is by direct molecular elimination of H2 into the gas phase. Hydrogen atom dissociation to adjacent lattice sites is a much slower process and the chemisorbed hydrogen atoms thus formed exhibit very short lifetimes on the order of (1.13–10.6)×10−13 s. The calculated rate coefficients for these two decomposition modes are 3.4×1010 and 0.79×1010 s−1 , respectively. The rate coefficients for the corresponding reactions on the (1×1) surface are 6.6×1010 and 5.3×1010 s−1 , respectively. The rates on the (1×1) surface are faster due to the increased exothermicity released by the formation of two tetrahedral Si–Si bonds upon chemisorption compared to a single Si–Si bond on the (7×7) surface. Molecular beam deposition/decomposition experiments of SiH4 on Si(111)– (7×7) surfaces reported by Farnaam and Olander [Surf. Sci. 145, 390 (1984)] indicate that chemisorbed hydrogen atoms are not formed in the SiH4 decomposition process whereas the present calculations suggest that such a reaction, although slow, does occur subsequent to SiH2 chemisorption. It is suggested that energetic differences between SiH4 and SiH2 chemisorption are responsible for these differences.