Verification of “lateral secondary ion mass spectrometry” as a method for measuring lateral dopant dose distributions in microelectronics test structures
- 1 January 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (1) , 386-393
- https://doi.org/10.1116/1.589816
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Method for the measurement of the lateral dose distribution of dopants at implantation or diffusion mask edges (‘‘lateral SIMS’’)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Monte Carlo simulation of ion implantation into two- and three-dimensional structuresIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989