GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

1 February 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (2) , 43-45
https://doi.org/10.1109/edl.1982.25471

Abstract

Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I2L types of digital integrated circuits.

Keywords

GALLIUM ARSENIDE
HETEROJUNCTION BIPOLAR TRANSISTORS
APPLICATION SPECIFIC INTEGRATED CIRCUITS
BIPOLAR INTEGRATED CIRCUITS
IMPLANTS
EPITAXIAL GROWTH
MOLECULAR BEAM EPITAXIAL GROWTH
MICROWAVE TRANSISTORS
ANNEALING
DIGITAL INTEGRATED CIRCUITS