Smooth Quantum Hydrodynamic Model Simulationof the Resonant Tunneling Diode
Open Access
- 1 January 1998
- journal article
- research article
- Published by Wiley in VLSI Design
- Vol. 8 (1-4) , 143-146
- https://doi.org/10.1155/1998/12905
Abstract
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.Keywords
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