Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defects
- 19 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12) , 1089-1091
- https://doi.org/10.1063/1.100030
Abstract
We present experimental evidence for the presence in semi-insulating undoped GaAs of the double-acceptor defect with ionization energies of 78 and 203 meV, which is currently attributed to the GaAs antisite in concentrations of at least 2×1015 cm−3. We then discuss the implications of this result for the compensation mechanism in these materials.Keywords
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