Barrier height enhancement of n -In 0.53 Ga 0.47 As Schottky diodes grown by MOCVD technique
- 12 September 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (19) , 1759-1761
- https://doi.org/10.1049/el:19911094
Abstract
Barrier height enhancement of n-In0.53Ga0.47As Schottky diodes grown by the MOCVD technique is demonstrated. A 30 nm thin fully depleted p+-In0.53Ga0.47As layer (Zn-doped, NA = 1.3 × 1018 cm−3) is used to enhance the Schottky barrier. Ti is used as a barrier metal and mesa diodes with different barrier contact areas are prepared. The quasi-Schottky diodes exhibit barrier heights in the range 0.58–0.62 eV, i.e. they reach higher values than reported until now. The I–V characteristics show an ideality factor of n = 1.03 ÷ 1.19 and a reverse current density of JR = (3.8 ÷ 42) × 10−5 A/cm2.Keywords
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