Properties of low dielectric constant fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition
- 1 November 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 332 (1-2) , 369-374
- https://doi.org/10.1016/s0040-6090(98)01039-6
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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