Methodology of MOSFET characteristics fluctuation description using BSIM3v3 SPICE model for statistical circuit simulations

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 14-17
https://doi.org/10.1109/iwstm.1998.729756

Abstract

A methodology for inclusion of MOSFET characteristics fluctuation into BSIM3v3 SPICE model is proposed. Fundamentally physical parameters such as gate oxide thickness (TOX), channel concentration (NCH), gate length (L), and parasitic resistance (RDSW) are chosen as an independent parameter set. Parameters which should be expressed by the above set are described in simple physical equations. This method allows not only statistical simulation based on electric test data that can be easily measured with a full-auto tester system, but also characteristics prediction of modified device structures or of future technology devices.

Keywords

This publication has 0 references indexed in Scilit: