Some properties of Gunn-effect oscillations in a biconical cavity
- 1 September 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (9) , 526-531
- https://doi.org/10.1109/T-ED.1967.15999
Abstract
Experiments have been performed to measure the parameters of epitaxial GaAs cavity controlled Gunn oscillators withnl \sim 10^{12}cm-2over the frequency range of 7 to 20 GHz. It is found that individual devices exhibit a large variation of transit frequency with bias voltage and this is related to their performance in a cavity. The real and imaginary parts of the device reactance under cavity controlled operating conditions and the RF voltage swing across the device have been measured. These are discussed in the light of presently available analytical theories.Keywords
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