An improved trilevel resist system for submicron optical lithography

Abstract
A number of spin-on glasses (SOG) have been investigated with respect to their suitability for submicron pattern generation in a trilevel process for optical lithography. Some of them can be significantly improved so as to permit baking of both the bottom polymer and SOG at temperatures below 200 °C without the formation of cracks and allowing the use of inorganic developers. A trilevel resist system has been used in combination with a high numerical aperture lens (Zeiss lens 10-78-02, NA=0.42, λ=436 nm) for generation of 0.5 μm lines and spaces over 1 μm SiO2 and aluminum steps.

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