Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (6) , 1459-1468
- https://doi.org/10.1109/3.29281
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasersApplied Physics Letters, 1987
- Threshold current of single quantum well lasers: The role of the confining layersApplied Physics Letters, 1986
- Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriersSemiconductor Science and Technology, 1986
- Emission wavelength of AlGaAs-GaAs multiple quantum well lasersApplied Physics Letters, 1986
- Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasersApplied Physics Letters, 1985
- GaAsAlGaAs MQW and GRINSCH lasers grown by molecular beam epitaxyPhysica B+C, 1985
- Deep states in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1984
- Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1984
- Threshold currents for AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1984
- Graded barrier single quantum well lasers - Theory and experimentIEEE Journal of Quantum Electronics, 1983