Nanometer lithography for III–V semiconductor wires using chloromethylated poly-α-methylstyrene resist
- 1 November 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (6) , 2308-2311
- https://doi.org/10.1116/1.584076
Abstract
Chloromethylated poly-α-methylstyrene negative resist was investigated for its suitability in the fabrication of nanometer structures for optical studies. Investigating the photoluminescence efficiency of etched GaAs/AlGaAs wires we find a steep decrease with decreasing wire width, whereas for InGaAs/InP the decrease is much smaller. The difference in the behavior of the material systems can be explained by the effectiveness of surface recombination.This publication has 0 references indexed in Scilit: