Thermally stable InGaP/GaAs Schottky contacts using low N content double layer WSiN
- 1 November 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (6) , 3543-3549
- https://doi.org/10.1116/1.588794
Abstract
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