High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC
- 4 December 2002
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 194 (2) , 456-459
- https://doi.org/10.1002/1521-396x(200212)194:2<456::aid-pssa456>3.0.co;2-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTsIEEE Electron Device Letters, 2001
- An insulator-lined silicon substrate-via technology with high aspect ratioIEEE Transactions on Electron Devices, 2001
- 0.25 µm gate-length, MBE-grown AlGaN/GaNHEMTs with high current and high
f
T
Electronics Letters, 2001
- GaN/AlGaN high electron mobility transistors withf τ of 110 GHzElectronics Letters, 2000
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999