35 GHz Low Noise HEMT Amplifier

1 January 1987

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1987.1132426

Abstract

A low noise HEMT amplifier has been developed for operation at 35 GHz. The three-stage amplifier exhibits a noise figure of 3.1 dB with an associated gain of 17.4 +- 0.4 dB across the 34.25 to 35.75 GHz frequency band.

Keywords

HEMTS
LOW-NOISE AMPLIFIERS
NOISE FIGURE
FREQUENCY
GALLIUM ARSENIDE
GAIN
CIRCUITS
MOCVD
ELECTRON MOBILITY
THERMAL RESISTANCE

This publication has 4 references indexed in Scilit:

A 30 GHz Low Noise FET Amplifier
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
60 and 70 GHz (HEMT) Amplifiers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
20 GHz-Band Low-Noise HEMT Amplifier
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
IEEE Electron Device Letters, 1986