Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures

26 March 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (7) , 309-310
https://doi.org/10.1049/el:19870229

Abstract

Oxides have been grown on silicon using an oxygen plasma at substrate temperatures less than 600°C in two different oxidation systems. Slices from 18 mm up to 100 mm in diameter have been oxidised and have proved to have similar growth kinetics. Oxide fixed charge levels are in the range 10¹⁰–10¹¹/cm² with electrical breakdown strengths up to 12 MV/cm.

Keywords

SI OXIDATION
LOW TEMPERATURES
SUBSTRATE TEMPERATURES
PLASMA OXIDATION
GROWTH OF THIN OXIDES
MICROWAVE OXIDATION SYSTEMS
O PLASMA
RF OXIDATION
SI-SIO2
FIXED CHARGE LEVELS
GROWTH KINETICS
18 TO 100 MM
ELECTRICAL BREAKDOWN STRENGTHS

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