CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORS

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Abstract
Using departure from stoichiometry for doping, p‐n junctions were prepared from CdxHg1−xTe alloys with 0.15 < x ≤ 0.28, and their current‐voltage characteristics were measured at 77°K. The spectral study of these photovoltaic detectors operating at 77°K showed responses from 3 μ up to 17.5 μ. Detectivity measurements at the wavelengths of maximum response of these detectors yielded values at 77°K between 1 and 5 × 109 cm‐W−1‐Hz1/2 in the range 3 to 14 μ. The speed of these detectors was measured to be 2 laser at several frequencies up to 25 MHz.
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