High-frequency noise of In y Ga 1− y As/Al x Ga 1− x As MODFETs and comparison to GaAs/Al x Ga 1− x As MODFETs

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Abstract
Noise parameter measurements for recently developed 1 μm gate InyGa1−yAs/Al0.15Ga0.85As MODFETs have been performed at 8 GHz at room and cryogenic temperatures. Owing to the relatively small Cgs/√gm ratio in these devices compared to identical conventional GaAs/AlGaAs MODFETs, both room- and cryogenic temperature noise figures have been reduced. In addition, the light sensitivity and drift in noise figure at cryogenic temperatures observed in conventional GaAs/AlGaAs MODFETs have been sub stantially reduced.