Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method
- 1 August 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (8) , 905-907
- https://doi.org/10.1016/0038-1101(80)90108-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Excess capacitance and non-ideal Schottky barriers on GaAsSolid-State Electronics, 1976
- Properties of CoGaAs and NiGaAs diodes fabricated by electroless platingSolid-State Electronics, 1972
- Die metall-halbleiter-kontaktbarrieren der metalle aus der nebengruppe I und VIII auf silizium und germaniumSolid-State Electronics, 1969
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963