Electron Mobility in CdS at High Electric Fields
- 15 December 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 176 (3) , 899-900
- https://doi.org/10.1103/physrev.176.899
Abstract
The Hall mobility of electrons in CdS platelets has been measured at 230°K as a function of the electric field using stationary cathode-adjacent high-field domains in the range of negative differential conductivity. The electron mobility is observed to be field-independent up to 30 kV/cm. Above 30 kV/cm it decreases linearly with the field from its low-field value of about 620 /V sec, to about 300 /V sec at 70 kV/cm, indicating scattering of hot electrons with optical phonons.
Keywords
This publication has 13 references indexed in Scilit:
- Stationary High-Field Domains in the Range of Negative Differential Conductivity in CdS Single CrystalsPhysical Review B, 1968
- Experimental Determination of Changes in Conductivity with Electric Field, Using a Stationary High-Field Domain AnalysisPhysical Review B, 1968
- Magnetism of the Titanium-Oxygen SystemJapanese Journal of Applied Physics, 1967
- Transient acoustoelectric interaction in CdS and ZnS crystalsBritish Journal of Applied Physics, 1966
- Layer-Like Field Inhomogeneities in Homogeneous Semiconductors in the Range of "-Shaped Negative Differential Conductivity"Physical Review B, 1965
- Effect of Traps on Acoustoelectric Current Saturation in CdSPhysical Review B, 1965
- Ultrasonic Amplification and Non-Ohmic Behavior in CdS and ZnOJournal of Applied Physics, 1963
- Acousto-Electric Explanation of Non-Ohmic Behavior in Piezoelectric Semiconductors and BismuthPhysical Review Letters, 1962
- Current Saturation in Piezoelectric SemiconductorsPhysical Review Letters, 1962
- Inhomogene Feldverteilung in CdS-Einkristallen im Bereich hoher Feldst rkenThe European Physical Journal A, 1959