High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy
- 23 April 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (9) , 832-833
- https://doi.org/10.1049/el:19920526
Abstract
Lattice matched GaInAs/InP Npn heterojunction bipolar transistors (HBTs) have been grown by low pressure metal organic vapour phase epitaxy (MOVPE) and processed with non-selfaligned fabrication techniques. The transistors exhibit a cutoff frequency of 60 GHz and maximum oscillation frequency of 32 GHz which are the highest values reported to date for GaInAs/InP HBTs grown by MOVPE.Keywords
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