High current gain GaInAs/InP hot electron transistor

5 July 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (14) , 1055-1056
https://doi.org/10.1049/el:19900683

Abstract

The highest current gain (more than 100 at 77 K) is reported in GaIlnAs/InP hot electron transistor (HET) grown by organo-metallic vapour-phase epitaxy. This result shows the promise of the GaInAs/InP material system for ballistic electron devices. A sudden increase of the collector current in the common-emitter characteristics was observed, which would have been caused by the quantum-interference effect.

Keywords

CURRENT GAIN
ORGANO-METALLIC VAPOUR-PHASE EPITAXY
HET
SEMICONDUCTORS
BALLISTIC ELECTRON DEVICES
HOT ELECTRON TRANSISTOR
GAIN 100
QUANTUM-INTERFERENCE EFFECT
COMMON-EMITTER CHARACTERISTICS
OMVPE
77 K
GAINAS-INP

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