Molecular beam epitaxial ZnSe:Mn dc electroluminescent cell with very low threshold voltage
- 1 September 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5797-5799
- https://doi.org/10.1063/1.329471
Abstract
A Au/ZnSe:Mn/n‐GaAS dc‐operated electroluminescent cell was prepared by molecular beam epitaxy. The lowest threshold voltage achieved was 3.8 V, and the highest power conversion efficiency and brightness were 7.6×10−5W/W(18 V, 0.0027 A/cm2) and 270 fL(16.8 V, 0.25 A/cm2), respectively. These values are superior to any previously reported in ZnSe:Mn EL cells.This publication has 4 references indexed in Scilit:
- Pulse-Excited Characteristics of Au/ZnSe : Mn/n-GaAs Low Threshold Thin Film DC EL CellJapanese Journal of Applied Physics, 1980
- Filamentary AC electroluminescence in ZnS:MnJournal of Electronic Materials, 1979
- Evidence for the direct impact excitation of Mn centers in electroluminescent ZnS:Mn filmsJournal of Applied Physics, 1976
- Time resolved spectroscopy of ZnS : Mn by dye laser techniqueJournal of Luminescence, 1976