Progress in ferroelectric memory technology
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
- Vol. 38 (6) , 704-711
- https://doi.org/10.1109/58.108872
Abstract
The application of ferroelectric films to semiconductor memories is discussed. Design and testing considerations are examined. A nonvolatile memory using the polarization hysteresis of ferroelectrics is described. Test results for PZT films on GaAs substrate are presented. The data show that nonvolatile memories are feasible and that commercial applications are within reach in the near future.< >Keywords
This publication has 1 reference indexed in Scilit:
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988