Nearly damage - free dry etching of AlGaInP/GaInP by electron cyclotron resonance technique
- 1 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 349-352
- https://doi.org/10.1016/0167-9317(94)90170-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-Power InGaAlP Laser Diodes for High-Density Optical RecordingJapanese Journal of Applied Physics, 1992
- Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structuresJournal of Vacuum Science & Technology B, 1988