Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS
- 3 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2) , 363-369
- https://doi.org/10.1016/0039-6028(86)90988-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Experimental Verification of the Surface Quantization of an-Type Inversion Layer of Silicon at 300 and 77°KPhysical Review B, 1972