An Ultra-low Thermal-budget SiGe-base Bipolar Technology
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1992
- MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/IEEE Electron Device Letters, 1992
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990