Lateral capacitive probing of an anode-loaded epitaxial coplanar gallium-arsenide diode

12 August 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (16) , 469-472
https://doi.org/10.1049/el:19710317

Abstract

Lateral capacitive probing of epitaxial coplanar diodes shows that the results described in a previous letter are related to the creation of a moving high-field region from the cathode. When this region reaches the anode, no other moving space-charge region appears at the cathode, which should imply the existence of a stationary high-field region at the anode.

Keywords

LATERAL CAPACITIVE PROBING
SAMPLING OSCILLOSCOPE
IMPEDANCE
12.4 GHZ
SEMICONDUCTOR DIODES
SPACE CHARGE DISTRIBUTION
EPITAXIAL COPLANAR DIODES
GAAS
HIGH FIELD REGION
DOMAINS

This publication has 1 reference indexed in Scilit:

Experimental evidence of bistable switching in a Gunn epitaxial coplanar diode by anode-surface loading
Electronics Letters, 1971