A study of ohmicity and exclusion in high-low semiconductor junction devices

1 July 1963

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 10 (4) , 268-277
https://doi.org/10.1109/T-ED.1963.15189

Abstract

The purpose of this paper is to describe the terminal properties of a class of high-low conductivity junction devices. In particular, the static forward-bias characteristics of theRnn^{+}Rstructure are found to be linear at low current densities and a critical current density level is derived, above which the forward-bias volt-ampere characteristics are nonlinear. In reverse bias some nonlinearity is present due to minority carrier exclusion and conditions are given for achieving linearity. Experimental studies show a capacitive effect present due to carrier exclusion and these data are discussed in terms of the present model.

Keywords

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