Raman spectra and lattice dynamics of intermixed AlAs/GaAs superlattices

1 January 1997

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 81 (1) , 224-233
https://doi.org/10.1063/1.364086

Abstract

We present Raman scattering measurements on a series of [100] short-period AlAsn/GaAsn superlattices. The Raman spectra show evidence for the effects of AlxGa1−xAs layer formation at the heterointerfaces and the experimental spectra are modeled using a random element isodisplacement type model. The model described is based on a rigid-ion lattice dynamic model and involves the construction of a superlattice cell from individual alloy unit cells. The resulting eigenvectors are used to calculate Raman spectra for the samples studied via the bond polarizability model. Comparison between experiment and theory shows near perfect agreement after intermixing effects are included. The effects of interface alloying on selection rules and interface modes are discussed. We also deduce dispersion in the AlAs optic phonon along the [100] direction.

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