Substrate current-a device and process monitor
- 1 December 1974
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 404-407
- https://doi.org/10.1109/iedm.1974.6219790
Abstract
Typical characteristics of an n-channel, enhancement-mode, insulated-gate field effect transistor (IGFET) are shown in Figure 1. The drain current is plotted against the drain voltage for different values of the gate voltage. It can be seen from the figure that, after saturation is reached, the drain current increases again as the drain voltage is further increased. This additional current is attributed to the substrate current and can be measured simultaneously in the substrate lead.Keywords
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