Heavy doped n-type single crystal epitaxial layers of gallium arsenide
- 1 November 1964
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (11) , 833-834
- https://doi.org/10.1016/0038-1101(64)90135-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The diffusion of tin and selenium in gallium arsenideSolid-State Electronics, 1963
- Behavior of selenium in gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- Diffused Junctions in GaAs Injection LasersJournal of the Electrochemical Society, 1963
- Vapor Growth of Gallium ArsenideJournal of the Electrochemical Society, 1961
- Boron Diffusion in SiliconJournal of the Electrochemical Society, 1961