Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at ~2.0 μm

1 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (7) , 574-576
https://doi.org/10.1049/el:19930386

Abstract

The first low threshold continuous operation of InGaAs strained layer quantum well lasers at ~2.0 μm is reported. The threshold current density of 5 μm wide and 1.5 mm long ridge waveguide lasers was less than 380 A/cm². The external differential quantum efficiency of 1 mm long lasers was as high as 15% and laser operation was observed at temperatures as high as 50°C. The lasers are characterised by T₀ = 54°C which is the highest characteristic temperature ever achieved at this wavelength in any material system.

Keywords

50 TO 54 DEGC
STRAINED LAYER
RIDGE WAVEGUIDE
INGAAS-INGAASP
QUANTUM WELL LASERS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT DENSITY
EXTERNAL DIFFERENTIAL QUANTUM EFFICIENCY
15 PERCENT
2 MICRON
CHARACTERISTIC TEMPERATURE
LOW THRESHOLD CONTINUOUS OPERATION

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