Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As

• 1 December 1997
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 258-263, 77-82
• https://doi.org/10.4028/www.scientific.net/msf.258-263.77

Abstract

Keywords

• COMPENSATED SEMICONDUCTORS
• IONIZED IMPURITY SCATTERING
• MOBILITY