P‐47: Fabrication and Characterization of Gated FEAs Using Carbon Nanotubes
- 1 May 2002
- journal article
- Published by Wiley in SID Symposium Digest of Technical Papers
- Vol. 33 (1) , 377-379
- https://doi.org/10.1889/1.1830808
Abstract
The gated field emitter using carbon nanotubes directly grown into submicron holes is advantageous for small area electron source, such as microwave generator, micro‐display. In order to realize better functions of the spindt‐type gated FEAs using CNTs directly grown into the submicron‐holes, we investigate freestanding CNTs grown on each micron‐sized Co dot without disturbing neighboring patterns and with not exceeding 2.5μm long by Thermal CVD.Keywords
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