The effect of extended light exposure on the Urbach tail and the subbandgap absorption in a-Si:H

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Abstract
We present a study of the effect of light exposure at 160 °K and 300 °K and of annealing on the spectral dependence of the photoconductivity of hydrogenated amorphous silicon (a‐Si:H) prepared by d.c. glow‐discharge deposition. We find no evidence for a change in the Urbach tail of the optical absorption curve larger than the experimental accuracy of 3 percent. We find that samples prepared either by r.f. or by d.c. glow‐discharge deposition show evidence that two kinds of centers are produced by extended light exposure. These centers are distinguished by their annealing kinetics and the temperature at which the samples are exposed to light.

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