High-Density Plasma Etching of Low Dielectric Constant Materials
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactorJournal of Vacuum Science & Technology A, 1997
- Fluorocarbon high-density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3Journal of Vacuum Science & Technology A, 1994
- Silicon etching mechanisms in a CF4/H2 glow dischargeJournal of Applied Physics, 1987