Strain effects in (Al y Ga 1- y ) x In 1- x Plasers operating at fixed threshold gain
- 3 February 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (3) , 236-238
- https://doi.org/10.1049/el:19940168
Abstract
The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65 Å in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.Keywords
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