Summary Abstract: Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si(100) and Ge(100)
- 1 March 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (2) , 552-553
- https://doi.org/10.1116/1.583176
Abstract
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