Ion-bombardment-induced resistivity changes in thin films of silver, gold, titanium, and tungsten

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Abstract
Energetic argon ions were injected into thin films (100–500 Å) of Ag, Au, Ti, and W, and changes in the electrical resistance of the films were observed. Three stages in the resistance change/ion dose relation were observed. The first at low ion doses, where the resistance falls, is believed to be a result of removal of contaminant gas from the surface. The next stage at higher ion doses, where the resistance increases to a quasi-constant value, is believed to be associated with damage production at and near the film surface. At still higher ion doses, the resistance increases to infinity as a result of sputtering of the film.

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