Modified quantum theory of electronic dielectric constant of III–V semiconductors

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Abstract
The relationship between the electronic dielectric constant ε and the interionic separation R for III–V semiconductors has been suitably modified by taking into account the d‐core effect. This relation gives excellent agreement between the calculated and observed values of the strain derivatives of ε for GaP and GaAs. The variation of d‐core effect with R has also been pointed out.