InGaAs/InP junction field-effect transistors with high transconductance made using metal organic vapor phase epitaxy
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (12) , 626-627
- https://doi.org/10.1109/EDL.1985.26254
Abstract
The growth and fabrication of a InGaAs/InP junction field-effect transistor using metal organic vapor phase epitaxy is reported for the first time. Very high extrinsic transconductance has been achieved (210 mS/mm for a gate length of 1.5 µm), by the use of a p-InP buffer layer which allows close to maximum electron velocity in the channel, and by using a self-alignment technique to give very low values of access resistance, typically 0.5 Ω.mm.Keywords
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