Chemical bonding at metal-semiconductor interfaces

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Abstract
Trends in the I–V characteristics of metal-semiconductor interfaces can be analyzed in terms of the atomic configurations at interfaces as well as the redistribution of electronic charge which occurs because of chemical bonding at the interface. The atomic configurations, in turn, depend on the thermal history of the interface, which can be discussed from several points of view. The chemical bonding picture can be contrasted with the more traditional approach based on surface states, such as those associated with dangling bonds on free semiconductor surfaces.

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